MMBT5551-B-AE3-B-R Ver la hoja de datos (PDF) - Unisonic Technologies
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MMBT5551-B-AE3-B-R Datasheet PDF : 4 Pages
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MMBT5551
■ TYPICAL CHARACTERICS
Fig.1 Collector Output Capacitance
10
8
f=1MHz
IE=0
6
4
2
0
100
101
102
Collector-Base Voltage (V)
Fig.3 Base-Emitter on Voltage
103
VCE=5V
102
101
100
0
0.2
0.4
0.6
0.8
1.0
Base-Emitter Voltage (V)
Fig.5 Current Gain -Bandwidth
Product
103
VCE=10V
102
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 DC Current Gain
103
VCE=5V
10 2
10 1
100
10-1
100
10 1
102
103
Collector Current, Ic (mA)
Fig.4 Saturation Voltage
101
Ic=10*IB
100
VBE ( SAT)
10-1
VCE(SAT )
10-2
-1
0
10
10
1
10
2
10
103
Collector Current, Ic (mA)
101
100
100
101
102
103
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-010,D
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