MOCD223VM Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MOCD223VM Datasheet PDF : 10 Pages
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
EMITTER
VF Input Forward Voltage
IR
Reverse Leakage Current
CIN Input Capacitance
DETECTOR
ICEO1
ICEO2
BVCEO
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
BVCBO
Collector-Base Breakdown
Voltage
BVECO
Emitter-Collector Breakdown
Voltage
CCE Collector-Emitter Capacitance
COUPLED
CTR Current Transfer Ratio
VCE(sat)
Collector-Emitter Saturation
Voltage
ton Turn-On Time
toff Turn-Off Time
tr
Rise Time
tf
Fall Time
Test Conditions
IF = 1.0 mA
VR = 6.0 V
VCE = 5.0 V, TA = 25°C
VCE = 5.0 V, TA = 100°C
IC = 100 µA
IC = 100 µA
IE = 100 µA
f = 1.0 MHz, VCE = 0
IF = 1.0 mA, VCE = 5.0 V
IC = 500 µA, IF = 1.0 mA
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
Min.
30
70
7
500
Typ. Max.
1.08 1.3
0.001 100
18
1.0 50
1.0
100
120
10
5.5
1000
1.0
10
125
8
110
Unit
V
µA
pF
nA
µA
V
V
V
pF
%
V
µs
ns
µs
µs
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
CISO
RISO
Input-Output Isolation Voltage t = 1 Minute
Isolation Capacitance
Isolation Resistance
VI-O = 0 V, f = 1 MHz
VI-O = ±500 VDC, TA = 25°C
Min.
2500
1011
Typ.
0.2
Max.
Unit
VACRMS
pF
Ω
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 4.6
4
www.fairchildsemi.com
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