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MMDT4146 Datasheet PDF : 5 Pages
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MMDT4146
Electrical Characteristics, NPN 4124 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V(BR)CBO
30
V(BR)CEO
25
V(BR)EBO
5.0
ICBO
⎯
IEBO
⎯
hFE
VCE(SAT)
VBE(SAT)
120
60
⎯
⎯
Cobo
⎯
Cibo
⎯
hfe
120
fT
300
NF
⎯
Max
⎯
⎯
⎯
50
50
360
⎯
0.30
0.95
4.0
8.0
480
⎯
5.0
Unit
Test Condition
V IC = 10μA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 20V, IE = 0V
nA VEB = 3.0V, IC = 0V
⎯ IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
V IC = 50mA, IB = 5.0mA
V IC = 50mA, IB = 5.0mA
pF
pF
⎯
MHz
dB
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
Electrical Characteristics, PNP 4126 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-25
-25
-4.0
⎯
⎯
hFE
VCE(SAT)
VBE(SAT)
120
60
⎯
⎯
Cobo
⎯
Cibo
⎯
hfe
120
Current Gain-Bandwidth Product
fT
250
Noise Figure
NF
⎯
Notes: 6. Short duration pulse test used to minimize self-heating effect.
Max
⎯
⎯
⎯
-50
-50
360
⎯
-0.40
-0.95
4.5
10
480
⎯
4.0
Unit
Test Condition
V IC = -10μA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10μA, IC = 0
nA VCB = -20V, IE = 0V
nA VEB = -3.0V, IC = 0V
⎯ IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
V IC = -50mA, IB = -5.0mA
V IC = -50mA, IB = -5.0mA
pF
pF
⎯
MHz
dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
MMDT4146
Document number: DS30162 Rev. 11 - 2
2 of 5
www.diodes.com
January 2009
© Diodes Incorporated
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