PZTA65 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
PZTA65 Datasheet PDF : 2 Pages
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PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V (B R )C E S
ICBO
IEBO
Collector-Emitter Breakdown
Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
IC = 100 µA, IB = 0
VCB = 30 V, IE = 0
VEB = 8.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
30
V
100
nA
100
nA
50,000
20,000
1.5
V
2.0
V
100
MHz
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