Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
15
16.5
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
39
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
- 16
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Gps
—
16.5
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD
—
- 30
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL
—
- 13
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
P1dB
—
120
—
W
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
Gps
—
16
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
η
—
51
—
%
Output Mismatch Stress
Ψ
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
No Degradation In Output Power
(2) Device measured in push - pull configuration.
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9120R3 MRF9120LR3
3