¡ Semiconductor
MSM7570L-01/02
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
(VDD = 2.7 V to 3.6 V, Ta = –25°C to +70°C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Power Supply Current
Operating Mode,
IDD1 No Signal, (VDD = 3.0 V)
—
7
14 mA
IDD2 Power Down Mode, (VDD = 3.0 V) —
0.1
0.2 mA
Input High Voltage
0.45
VIH
—
—
¥ VDD
VDD
V
Input Low Voltage
VIL
—
0.16
0.0
—
V
¥ VDD
Input Leakage Current
IIH VI = VDD
IIL VI = 0 V
—
—
2.0 mA
—
—
0.5 mA
Output Low Voltage
VOL 1 LSTTL, Pull-up: 500 W
0.0
0.2
0.4
V
Output Leakage Current
IO IS
—
—
10
mA
Input Capacitance
CIN
—
—
5
—
pF
Output Resistance
ROSG SG
—
25
50
kW
SG Warm-up Time
SG´GND 10 + 0.1 mF
TSG (Rise time to 90% of max. level) —
700
—
ns
Transmit Analog Interface Characteristics
(VDD = 2.7 V to 3.6 V, Ta = –25°C to +70°C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Input Resistance
Output Load Resistance
Output Load Capacitance
Output Amplitude
Input Offset Voltage
RINX
RLGX
CLGX
VOGX
VOFGX
AIN1+ , AIN1– , AIN2
GSX1, GSX2
GSX1, GSX2
GSX1, GSX2, RL = 20 kW
Pre–OPAMPs
10
—
— MW
20
—
—
kW
—
—
100 pF
—
—
*1.30 VPP
–20
—
+20 mV
* –7.7 dBm (600 W) = 0 dBm0, + 3.14 dBm0 = 1.30 VPP (A-law)
–7.7 dBm (600 W) = 0 dBm0, + 3.17 dBm0 = 1.30 VPP (m-law)
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