NCT1008DMN3R2G Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

NCT1008DMN3R2G

±1°C Temperature Monitor with Series Resistance Cancellation

ON Semiconductor 

NCT1008

ON−CHIP

TEMPERATURE

SENSOR

CONVERSION RATE

REGISTER

LOCAL TEMPERATURE

VALUE REGISTER

D+ 2

D– 3

ANALOG

MUX

A−TO−D

CONVERTER

BUSY RUN/STANDBY

REMOTE TEMPERATURE

VALUE REGISTER

REMOTE OFFSET

REGISTER

EXTERNAL DIODE OPEN−CIRCUIT

NCT1008

STATUS REGISTER

ADDRESS POINTER

REGISTER

LOCAL TEMPERATURE

LOW−LIMIT REGISTER

LOCAL TEMPERATURE

HIGH−LIMIT REGISTER

REMOTE TEMPERATURE

LOW−LIMIT REGISTER

REMOTE TEMPERATURE

HIGH−LIMIT REGISTER

LOCAL THERM LIMIT

REGISTERS

EXTERNAL THERM LIMIT

REGISTERS

CONFIGURATION

REGISTERS

INTERRUPT

MASKING

SMBus/I 2C INTERFACE

1

VDD

5

GND

7

SDATA

8

SCLK

Figure 1. Functional Block Diagram

6 ALERT/THERM2

4 THERM

ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Unit

Positive Supply Voltage (VDD) to GND

D+

D− to GND

−0.3, +3.6

V

−0.3 to VDD + 0.3

V

−0.3 to +0.6

V

SCLK, SDATA, ALERT, THERM

−0.3 to +3.6

V

Input Current, SDATA, THERM

−1, +50

mA

Input Current, D−

±1

mA

ESD Rating, All Pins (Human Body Model)

1500

V

Maximum Junction Temperature (TJ Max)

Storage Temperature Range

150

°C

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.

THERMAL CHARACTERISTICS

Package Type

8−Lead DFN

qJA

qJC

142

43.74

Unit

°C/W

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