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NIF5003N

Self−Protected FET with Temperature and Current Limit

ON Semiconductor 

NIF5003N

Preferred Device

Self−Protected FET

with Temperature and

Current Limit

42 V, 14 A, Single N−Channel, SOT−223

HDPlus™ devices are an advanced series of power MOSFETs which

utilize ON Semiconductors latest MOSFET technology process to

achieve the lowest possible on−resistance per silicon area while

incorporating smart features. Integrated thermal and current limits

work together to provide short circuit protection. The devices feature

an integrated Drain−to−Gate Clamp that enables them to withstand

high energy in the avalanche mode. The Clamp also provides

additional safety margin against unexpected voltage transients.

Electrostatic Discharge (ESD) protection is provided by an integrated

Gate−to−Source Clamp.

Features

• Short Circuit Protection/Current Limit

• Thermal Shutdown with Automatic Restart

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Slew Rate Control for Low Noise Switching

• Overvoltage Clamped Protection

• Pb−Free Packages are Available

http://onsemi.com

VDSS

(Clamped)

42 V

RDS(on) TYP

53 mW @ 10 V

ID MAX

(Limited)

14 A

Drain

Gate

Input

Overvoltage

Protection

RG

MPWR

ESD Protection

Temperature Current Current

Limit

Limit Sense

Source

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage

Drain Current

Continuous

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 25 Vdc, VGS = 5.0 Vdc,

VDS = 40 Vdc, IL = 3.2 Apk, L = 120 mH,

RG = 25 W)

Operating and Storage Temperature Range

(Note 3)

VDSS

VGS

ID

PD

RqJC

RqJA

RqJA

EAS

42

Vdc

"14

Vdc

Internally Limited

W

1.25

1.9

°C/W

12

100

65

400

mJ

TJ, Tstg −55 to 150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings

are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended

Operating Conditions may affect device reliability.

1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.

2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.

3. Normal pre−fault operating range. See thermal limit range conditions.

4

1

2

3

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

1

GATE

2

DRAIN

3

SOURCE

4

DRAIN

A

= Assembly Location

Y

= Year

W

= Work Week

5003N = Specific Device Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2006

1

April, 2006 − Rev. 2

Publication Order Number:

NIF5003N/D

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