NID5003N(2004) Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

NID5003N
(Rev.:2004)

Self-Protected FET with Temperature and Current Limit

ON Semiconductor 

NID5003N

Preferred Device

Self−Protected FET

with Temperature and

Current Limit

42 V, 20 A, Single N−Channel, DPAK

HDPlust devices are an advanced series of power MOSFETs

which utilize ON Semiconductors latest MOSFET technology process

to achieve the lowest possible on−resistance per silicon area while

incorporating smart features. Integrated thermal and current limits

work together to provide short circuit protection. The devices feature

an integrated Drain−to−Gate Clamp that enables them to withstand

high energy in the avalanche mode. The Clamp also provides

additional safety margin against unexpected voltage transients.

Electrostatic Discharge (ESD) protection is provided by an integrated

Gate−to−Source Clamp.

Features

• Short Circuit Protection/Current Limit

• Thermal Shutdown with Automatic Restart

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Slew Rate Control for Low Noise Switching

• Overvoltage Clamped Protection

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage

Drain Current

Continuous

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

VDSS

VGS

ID

PD

RqJC

RqJA

RqJA

42

Vdc

"14 Vdc

Internally Limited

W

1.3

2.3

°C/W

3.0

95

54

Single Pulse Drain−to−Source Avalanche

EAS

600

mJ

Energy

(VDD = 25 Vdc, VGS = 5.0 Vdc,

IL = 3.2 Apk, L = 120 mH, RG = 25 W)

Operating and Storage Temperature Range TJ, Tstg −55 to °C

(Note 3)

150

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.

2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.

3. Normal pre−fault operating range. See thermal limit range conditions.

http://onsemi.com

VDSS

(Clamped)

42 V

RDS(on) TYP

42 mW @ 10 V

ID MAX

(Limited)

20 A*

Drain

Gate

Input

Overvoltage

Protection

RG

ESD Protection

MPWR

Temperature Current Current

Limit

Limit Sense

Source

DPAK

CASE 369C

STYLE 2

MARKING

DIAGRAM

1

AYW

2

3

D5003N

D5003N = Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

1 = Gate

2 = Drain

3 = Source

ORDERING INFORMATION

Device

Package

Shipping†

NID5003NT4

DPAK 2500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

*Max current may be limited below this value

depending on input conditions.

© Semiconductor Components Industries, LLC, 2004

1

August, 2004 − Rev. 2

Publication Order Number:

NID5003N/D

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