NTK3139P(2006) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

NTK3139P
(Rev.:2006)

Power MOSFET

ON Semiconductor 

NTK3139P

150

Ciss

120

90

60

TYPICAL CHARACTERISTICS

VGS = 0 V

TJ = 25°C

100

VDD = −10 V

ID = −200 mA

VGS = −4.5 V

td(off)

tf

10

td(on)

tr

30

Coss

0 Crss

0 2 4 6 8 10 12 14 16 18 20

−DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1

1

10

100

RG, GATE RESISTANCE (W)

Figure 8. Resistive Switching Time Variation

vs. Gate Resistance

2.0

VGS = 0 V

1.5

150°C

125°C

25°C

1.0

TJ = −55°C

0.5

0

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

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