PEMH9 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PEMH9 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product specification
PEMB9; PUMB9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Per transistor
Rth j-a
thermal resistance from junction to ambient Tamb ≤ 25 °C
SOT363
note 1
625
SOT666
notes 1 and 2
625
Per device
Rth j-a
thermal resistance from junction to ambient Tamb ≤ 25 °C
SOT363
note 1
416
SOT666
note 1
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
Cc
emitter-base cut-off current
DC current gain
saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
VCB = −50 V; IE = 0
VCE = −30 V; IB = 0
VCE = −30 V; IB = 0; Tj = 150 °C
VEB = −5 V; IC = 0
VCE = −5 V; IC = −5 mA
IC = −5 mA; IB = −0.25 mA
VCE = −5 V; IC = −100 µA
VCE = −0.3 V; IC = −1 mA
IE = ie = 0; VCB = −10 V;
f = 1 MHz
MIN.
−
−
−
−
100
−
−
−1.4
7
TYP.
−
−
−
−
−
−
−0.7
−0.8
10
MAX.
−100
−1
−50
−150
−
−100
−0.5
−
13
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
3.7 4.7 5.7
−
−
3
pF
2003 Oct 03
4
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