PEMD17 Ver la hoja de datos (PDF) - Philips Electronics
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PEMD17 Datasheet PDF : 12 Pages
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Philips Semiconductors
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Min Typ Max Unit
[1] -
-
625 K/W
[1] [2] -
-
625 K/W
[1] -
-
416 K/W
[1] [2] -
-
416 K/W
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 2 mA
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
Min
Typ
Max
Unit
-
-
100
nA
-
-
1
µA
-
-
50
µA
-
-
110
µA
60
-
-
-
-
150
mV
-
1.7
1.2
V
4
2.7
-
V
33
47
61
kΩ
0.37
0.47
0.57
-
-
2.5
pF
-
-
3
pF
9397 750 14367
Product data sheet
Rev. 03 — 24 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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