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PHX20N06T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

PHX20N06T

N-channel TrenchMOS™ standard level FET

Rev. 01 — 16 February 2004

Product data

M3D308

1. Product profile

1.1 Description

N-channel enhancement mode field-effect power transistor in a fully isolated plastic

package using TrenchMOS™ technology.

1.2 Features

s Standard level compatible

s Isolated package.

1.3 Applications

s DC motor control

s DC-to-DC converters

s Synchronous rectification

s General purpose power switching.

1.4 Quick reference data

s VDS ≤ 55 V

s Ptot ≤ 23 W

s ID ≤ 12.9 A

s RDSon ≤ 75 mΩ.

2. Pinning information

Table 1:

Pin

1

2

3

mb

Pinning - SOT186A (TO-220F), simplified outline and symbol

Description

Simplified outline

gate (g)

mb

source (s)

drain (d)

mounting base;

isolated

Symbol

d

g

MBB076

s

1 2 3 MBK110

SOT186A (TO-220F)

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