PMBFJ108 Ver la hoja de datos (PDF) - Philips Electronics
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PMBFJ108 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
• Low RDSon at zero gate voltage
( < 8 Ω for PMBFJ108).
DESCRIPTION
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
handbook, halfpage
3
1
2
Top view
d
g
s
MAM385
PINNING - SOT23
PIN
DESCRIPTION
1 drain
2 source
3 gate
Note
1. Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
VGSO
VGDO
IG
drain-source voltage
gate-source voltage
drain-drain voltage
forward gate current
(DC)
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction
temperature
CONDITIONS MIN. MAX. UNIT
−
±25 V
−
−25 V
−
−25 V
50 mA
Tamb = 25°C;
note 1
−
250 mW
−65 150 °C
−
150 °C
April 1995
2
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