PMD16K Ver la hoja de datos (PDF) - Central Semiconductor
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PMD16K Datasheet PDF : 2 Pages
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PMD16K SERIES NPN
PMD17K SERIES PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PMD16K, PMD17K
series types are complementary silicon Darlington power
transistors, manufactured by the epitaxial base process,
mounted in a hermetically sealed metal package, and
designed for power switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
PMD16K60
PMD17K60
60
60
PMD16K80
PMD17K80
80
80
5.0
20
40
500
200
-65 to +200
0.875
PMD16K100
PMD17K100 UNITS
100
V
100
V
V
A
A
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICER
VCE=Rated VCEO, RBE=1.0kΩ
ICER
VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=100mA (PMD16K60, 17K60)
60
BVCEO IC=100mA (PMD16K80, 17K80)
80
BVCEO IC=100mA (PMD16K100, 17K100)
100
VCE(SAT) IC=10A, IB=40mA
VBE(SAT) IC=10A, IB=40mA
VBE(ON) VCE=3.0V, IC=10A
hFE
VCE=3.0V, IC=10A (PMD16K series)
1.0K
hFE
VCE=3.0V, IC=10A (PMD17K series)
800
hfe
VCE=3.0V, IC=7.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=7.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
1.0
5.0
2.0
2.0
2.8
2.8
20K
20K
400
UNITS
mA
mA
mA
V
V
V
V
V
V
MHz
pF
R1 (26-November 2012)
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