PMSTA06 Ver la hoja de datos (PDF) - Philips Electronics

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PMSTA06

NPN general purpose transistors

Philips Electronics 

Philips Semiconductors

NPN general purpose transistors

Product specification

PMSTA05; PMSTA06

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

625

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

ICBO

IEBO

hFE

VCEsat

VBEsat

VBE

fT

PARAMETER

collector cut-off current

PMSTA05

PMSTA06

emitter cut-off current

DC current gain

collector-emitter saturation voltage

base-emitter saturation voltage

base-emitter voltage

transition frequency

CONDITIONS

MIN.

IE = 0; VCB = 60 V

−

IE = 0; VCB = 80 V

−

IC = 0; VEB = 3 V

−

IC = 10 mA; VCE = 2 V

50

IC = 100 mA; VCE = 1 V; note 1

50

IC = 100 mA; IB = 10 mA; note 1 −

IC = 100 mA; IB = 10 mA; note 1 −

IC = 100 mA; VCE = 1 V

−

IC = 10 mA; VCE = 2 V; f = 100 MHz 100

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

MAX. UNIT

100

nA

100

nA

500

nA

−

−

250

mV

900

mV

1.2

V

−

MHz

1999 Apr 29

3

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