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Número de pieza
componentes Descripción
RFU20TM5S Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RFU20TM5S
Super Fast Recovery Diode
ROHM Semiconductor
RFU20TM5S Datasheet PDF : 4 Pages
1
2
3
4
RFU20TM5S
Electrical characteristic curves
Data Sheet
100
100000
Tj=150
C
10
Tj=125
C
Tj=25
C
1
10000
1000
100
10
0.1
1
0 500 1000 1500 2000 2500 3000
0
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
Tj=150
C
Tj=125
C
1000
100
Tj=25
C
100 200 300 400 500 600
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
0
1800
1700
1600
1500
100
T
j
=25
C
I
F
=20A
n=20pcs
10
AVE : 1567mV
450
T
j
=25
C
V
R
=530V
430
AVE : 64.0nA
n=20pcs
410
390
370
f=1MHz
Tj=25
C
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
AVE : 419pF
T
j
=25
C
f=1MHz
V
R
=0V
n=10pcs
1400
V
F
DISPERSION MAP
1
I
R
DISPERSION MAP
350
Ct DISPERSION MAP
300
250
200
150
100
1000
100
10
1
40
I
FSM
1cyc
35
8.3ms
30
AVE : 231.0A
25
20
15
10
I
FSM
DISRESION MAP
5
I
FSM
4
t
3
2
1
10
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
0
100
T
j
=25
C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
AVE : 22.7ns
trr DISPERSION MAP
AVE : 0.9kV
AVE : 2.32kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
1000
100
I
FSM
10
1
8.3ms 8.3ms
1cyc
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
IM=100mA
I
F
=1A
10
1ms
time
300us
Rth(j-a)
1
Rth(j-c)
0.1
0.001
0.01 0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
100 1000
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2/3
2011.06 - Rev.A
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