RJK6006DPP-E0 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

RJK6006DPP-E0

600V - 5A - MOS FET High Speed Power Switching

Renesas Electronics 

RJK6006DPP-E0

Electrical Characteristics

Item

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate to source charge

Gate to drain charge

Body-drain diode forward voltage

Body-drain diode reverse recovery time

Note: 5. Pulse test

Preliminary

(Ta = 25C)

Symbol Min Typ Max Unit

Test Conditions

V(BR) DSS 600

—

—

V ID = 10 mA, VGS = 0

IDSS

—

—

1

A VDS = 600 V, VGS = 0

IGSS

—

—

0.1 A VGS = 30 V, VDS = 0

VGS (off)

3.0

—

4.5

V VDS = 10 V, ID = 1 mA

RDS (on)

—

1.4

1.6

 ID = 2.5 A, VGS = 10 V Note 5

Ciss

— 600

—

pF VDS = 25 V

Coss

—

70

—

pF VGS = 0

Crss

—

10

—

pF f = 1 MHz

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

VDF

trr

—

25

—

17

—

60

—

10

—

ns ID = 2.5 A

—

ns VGS = 10 V

—

ns RL = 80 

—

ns Rg = 10 

—

19

—

nC VDD = 480 V

— 3.4

—

nC VGS = 10 V

—

9.2

—

nC ID = 5 A

—

0.9

1.5

V

IF = 5 A, VGS = 0 Note 5

— 250

—

ns IF = 5 A, VGS = 0

diF/dt = 100 A/s

R07DS0610EJ0100 Rev.1.00

Mar 16, 2012

Page 2 of 6

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