RM30TB-M Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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Fabricante

RM30TB-M

MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE

MITSUBISHI ELECTRIC  

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VRRM

VRSM

Ea

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Recommended AC input voltage

MITSUBISHI DIODE MODULES

RM30TB-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

Voltage class

Unit

M

H

400

800

V

480

960

V

110

220

V

Symbol

IO

IFSM

I2t

f

Tj

Tstg

Viso

Parameter

DC output current

Surge (non-repetitive) forward current

I2t for fusing

Maximum operating frequency

Junction temperature

Storage temperature

Isolation voltage

Conditions

Three-phase full wave rectifying circuit, TC=105°C

One half cycle at 60Hz, peak value

Value for one cycle of surge current

Charged part to case

—

Mounting torque

Main terminal screw M4

Mounting screw M4

—

Weight

Typical value

Ratings

60

1000

4.2 × 103

1000

–40~+150

–40~+125

2000

0.98~1.47

10~15

0.98~1.47

10~15

100

Unit

A

A

A2s

Hz

°C

°C

V

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

IRRM

VFM

Rth (j-c)

Rth (c-f)

Repetitive reverse current

Forward voltage

Thermal resistance

Contact thermal resistance

—

Insulation resistance

Test conditions

Tj=150°C, VRRM applied

Tj=25°C, IFM=100A, instantaneous meas.

Junction to case

Case to fin, conductive grease applied

Measured with a 500V megohmmeter between main terminal

and case

Min.

—

—

—

—

Limits

Typ.

—

—

—

—

Max.

10

1.3

0.31

0.09

10

—

—

Unit

mA

V

°C/ W

°C/ W

MΩ

Feb.1999

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