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Número de pieza
componentes Descripción
RN2307 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
RN2307
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
RN2307 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Electrical Characteristics
(Ta = 25
°
C)
Characteristic
Collector cut-off current
RN2307
Emitter cut-off current
RN2308
RN2309
RN2307
DC current gain
RN2308
RN2309
Collector-emitter saturation voltage
RN2307
Input voltage (ON)
RN2308
RN2309
RN2307
Input voltage (OFF)
RN2308
RN2309
Translation frequency
Collector output capacitance
Input resistor
Resistor ratio
RN2307
RN2308
RN2309
RN2307
RN2308
RN2309
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test
Circuit
Test Condition
―
V
CB
=
−
50V, I
E
= 0
―
V
CE
=
−
50V, I
B
= 0
―
V
EB
=
−
6V, I
C
= 0
―
V
EB
=
−
7V, I
C
= 0
―
V
EB
=
−
15V, I
C
= 0
―
―
V
CE
=
−
5V, I
C
=
−
10mA
―
―
I
C
=
−
5mA, I
B
=
−
0.25mA
―
―
V
CE
=
−
0.2V, I
C
=
−
5mA
―
―
―
V
CE
=
−
5V, I
C
=
−
0.1mA
―
―
V
CE
=
−
10V, I
C
=
−
5mA
―
V
CB
=
−
10V, I
E
= 0,
f = 1MHz
―
―
―
―
―
―
―
―
RN2307~RN2309
Min Typ. Max Unit
―
―
−
0.081
−
0.078
−
0.167
80
80
70
―
−
0.7
−
1.0
−
2.2
−
0.5
−
0.6
−
1.5
―
―
―
―
―
―
―
―
―
−
0.1
―
―
―
―
―
―
200
−
100
−
500
−
0.15
−
0.145
−
0.311
―
―
―
−
0.3
−
1.8
−
2.6
−
5.8
−
1.0
−
1.16
−
2.6
―
nA
mA
―
V
V
V
MHz
―
3
6
pF
7
10
13
15.4 22 28.6 k
Ω
32.9 47 61.1
0.191 0.213 0.232
0.421 0.468 0.515
―
1.92 2.14 2.35
2
2001-06-07
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