G02N60(2006) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

G02N60
(Rev.:2006)

Fast IGBT in NPT-technology

Infineon Technologies 

SGB02N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=2A,

VGE=0/15V,

RG=118Ω,

Lσ1) =180nH,

Cσ1) =180pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

20

13

259

52

0.036

0.028

0.064

24 ns

16

311

62

0.041 mJ

0.036

0.078

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C,

VCC=400V, IC=2A,

VGE=0/15V,

RG=118Ω,

Lσ1) =180nH,

Cσ1) =180pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

20

14

287

67

0.054

0.043

0.097

24 ns

17

344

80

0.062 mJ

0.056

0.118

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

3

Rev. 2.3 Nov 06

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