SI2300 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
SI2300 Datasheet PDF : 4 Pages
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20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Static 3)
Symbol
Test Condition
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic4)
BVDSS VGS = 0V, ID = 250uA
RDS(on) VGS = 2.5V, ID = 2.0A
RDS(on) VGS = 4.5V, ID = 3.0A
VGS(th) VDS =VGS, ID = 250uA
IDSS VDS = 20V, VGS = 0V
IGSS VGS = ± 12V, VDS = 0V
gfs VDS = 5V, ID = 4.2A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 10V, ID = 3.6A
VGS = 4.5V
VDD = 10V, RG = 6Ω
ID = 1A, VGS = 4.5V
RL = 5.5 Ω
VDS = 10V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD IS = 1.6A, VGS = 0V
Notes
3) Short duration test pulse used to minimize self-heating effect.
4) Pulse test pulse width<=300us,duty cycle<= 2%.
Min.
20
0.6
SI2300
Typ.
Miax.
Unit
V
70.0 80.0
mΩ
60.0 70.0
0.76
V
1
uA
±100
nA
5
S
5.4
10
0.65
nC
1. 5
12
25
36
60
ns
34
60
10
25
340
115
pF
33
1.6
A
1.2
V
２
JinYu
semiconductor
www.htsemi.com
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