SI3200 Ver la hoja de datos (PDF) - Silicon Laboratories
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SI3200 Datasheet PDF : 112 Pages
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Si3220/25 Si3200/02
Table 3. 3.3 V Power Supply Characteristics1 (Continued)
(VDD, VDD1 – VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min Typ Max Unit
VDD Supply Current
(Si3200/2)
IVDD
Sleep mode, RESET = 0
Open (high-impedance)
—
110
— µA
—
110
— µA
Active on-hook standby
—
110
— µA
Forward/reverse active off-hook,
ABIAS = 4 mA, VBAT = –24 V
—
110
— µA
Forward/reverse OHT, OBIAS = 4 mA,
VBAT = –70 V
—
110
— µA
Ringing, VRING = 45 Vrms,
VBAT = –70 V,
Sine Wave, 1 REN load
—
110
— µA
VBAT Supply Current
(Si3200/2)
IVBAT
Sleep mode, RESET=0,
VBAT = –70 V
—
100
— µA
Open (high-impedance),
VBAT = –70 V
—
189
— µA
Active on-hook standby,
VBAT = –70 V
—
517
— µA
Forward/reverse active off-hook,
ABIAS = 4 mA, VBAT = –24 V
— 4.5 + — mA
ILIM
Forward/reverse OHT, OBIAS = 4 mA,
VBAT = –70 V
—
8.6
— mA
Ringing, VRING = 45 Vrms,
VBAT = –70 V,
Sine Wave, 1 REN load2
—
6.5
— mA
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "3.14.4. Ringing Power Considerations" on page 54 for current and power consumption under other operating
conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional (VDD + |VBAT|) x ILOOP term.
Rev. 1.3
7
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