SI4874BDY(2009) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

SI4874BDY
(Rev.:2009)

N-Channel 30-V MOSFET

Vishay Semiconductors 

N-Channel 30-V MOSFET

Si4874BDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

30

0.007 at VGS = 10 V

0.0085 at VGS = 4.5 V

ID (A)

16

14

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFETs

• 100 % Rg Tested

S1

S2

S3

G4

SO-8

8D

7D

6D

5D

Top View

Ordering Information: Si4874BDY-T1-E3 (Lead (Pb)-free)

Si4874BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

30

V

VGS

± 20

Continuous Drain Current (TJ = 150 °C)a

Pulsed Drain Current

TA = 25 °C

TA = 70 °C

ID

16

13

12

9

A

IDM

± 50

Continuous Source Current (Diode Conduction)a

IS

2.7

1.40

Maximum Power Dissipationa

TA = 25 °C

TA = 70 °C

PD

3.0

1.6

2.0

1.0

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient (MOSFET)a

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

t ≤ 10 s

Steady State

Steady State

Symbol

RthJA

RthJF

Typical

34

68

16

Maximum

41

80

21

Unit

°C/W

Document Number: 73058

S09-0540-Rev. C, 06-Apr-09

www.vishay.com

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