SPB80N03S2L Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
SPB80N03S2L Datasheet PDF : 8 Pages
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13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 20 A, VDD = 25 V, RGS = 25 Ω
260
mJ
220
200
180
160
140
120
100
80
60
40
20
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36 SPP80N03S2L-06
V
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 80 A pulsed
SPP80N03S2L-06
16
V
12
10
0,2 V
DS max
0,8 VDS max
8
6
4
2
0
0 10 20 30 40 50 60 nC 80
QGate
34
33
32
31
30
29
28
27
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2003-05-09
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