15N60C3(2003) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

15N60C3
(Rev.:2003)

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPP15N60C3, SPI15N60C3

SPA15N60C3

13 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

10 2 SPP15N60C3

14 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

15

A

A

10 1

9

Tj(START)=25°C

10 0

10 -1

0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

0.4 0.8 1.2 1.6 2 2.4 V 3

VSD

15 Avalanche energy

EAS = f (Tj)

par.: ID = 7.5 A, VDD = 50 V

0.5

mJ

6

Tj(START)=125°C

3

0

10

-3

10 -2

10 -1

10 0

10 1

10 2

µs 10 4

tAR

16 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

SPP15N60C3

720

V

680

660

0.3

640

620

0.2

600

0.1

580

560

0

20 40 60 80 100 120 °C 160

Tj

540

-60 -20

20

60 100 °C

180

Tj

Page 8

2003-07-01

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