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STPS1545F Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STPS1545F Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
STPS1545D/F/FP/R/G
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
TO-220AC, I2PAK,
D2PAK
ISOWATT220AC
TO-220FPAC
Value
1.6
4.0
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR * Reverse leakage current
VF * Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 125°C IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 125°C IF = 30 A
Min. Typ. Max. Unit
200 µA
11 40 mA
0.5 0.57 V
0.84
0.65 0.72
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.01 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average current versus ambient
temperature (δ = 0.5).
PF(av)(W)
12
10
δ = 0.05
δ = 0.1
δ = 0.2
8
6
4
2
IF(av) (A)
0
0 2 4 6 8 10
δ = 0.5
δ=1
T
δ=tp/T
tp
12 14 16 18
IF(av)(A)
18
16
14
12
10
8
6
T
4
2
δ=tp/T
0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
ISOWATT220AC
tp
50
Tamb(°C)
75 100 125
TO-220AC
150 175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
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