STPS1545F Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS1545F Datasheet PDF : 7 Pages
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Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(TO-220AC, I2PAK and D2PAK).
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
STPS1545D/F/FP/R/G
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
Fig. 6-1: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC, I2PAK and D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
5E+4
1E+4
1E+3
1E+2
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1E+1
1E+0
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45
C(pF)
2000
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5
10
20
50
3/7
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