STPS1L30U Ver la hoja de datos (PDF) - Vishay Semiconductors
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STPS1L30U Datasheet PDF : 5 Pages
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STPS1L30UPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.420
0.470
0.300
0.375
0.2
5.0
15
200
2.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
RthJL (2)
RthJA
DC operation
TEST CONDITIONS
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 150
UNITS
°C
25
°C/W
80
0.10
g
0.003
oz.
V13L
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94324
Revision: 15-Aug-08
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