STPS40L45CGY-TR Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS40L45CGY-TR Datasheet PDF : 7 Pages
| |||
STPS40L45C-Y
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
16
14
δ = 0.05
12
δ = 0.1
δ = 0.2
δ = 0.5
IF(AV)(A)
22
20
18
16
Rth(j-a) = Rth(j-c)
10
14
δ=1
12
8
10
Rth(j-a) = 15 °C/W
6
8
4
T
6
T
4
2
IF(AV)(A)
δ = tp / T tp
2 δ = tp / T tp
Tamb(°C)
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
IM(A)
250
225
200
175
150
125
100
75
50
25
0
1E-3
t(s)
1E-2
1E-1
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ = tp / T tp
1E-1
1E+0
Doc ID 023224 Rev 1
3/7
Share Link: 