STTH602CBY(2012) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STTH602CBY Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STTH602C-Y
Table 2. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current, = 0.5
IFSM
Tstg
Tj
Surge non repetitive forward current
Storage temperature range
Operating junction temperature
200
V
11
A
Per diode Tc = 160° C
3
A
Per device Tc = 155° C
6
tp = 10 ms Sinusoidal
60
A
-65 to + 175 ° C
-40 to + 175 ° C
Table 3. Thermal parameters
Symbol
Rth(j-c)
Junction to case
Rth(c)
Coupling
Parameter
Per diode
Per device
Per diode
Per diode
Value
5
3.0
1
3
Unit
° C/W
When the two diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
IF = 3 A
IF = 6 A
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.033 IF2(RMS)
Typ.
3
0.98
0.8
1.1
0.9
Max. Unit
3
µA
30
1.1
0.95
V
1.25
1.05
2/7
Doc ID 023250 Rev 1
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