STTH602CBY(2012) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STTH602CBY Datasheet PDF : 7 Pages
| |||
Characteristics
STTH602C-Y
Figure 5.
C(pF)
100
Junction capacitance versus
reverse applied voltage (typical
values per diode)
F=1MHz
Vosc=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
100
IF=3A
VR=160V
80
60
Tj=125°C
40
Tj=25°C
20
0
dIF/dt(A/µs)
0 50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery time versus dIF/dt Figure 8. Peak reverse recovery current
(typical values)
versus dIF/dt (typical values)
tRR(ns)
80
70
60
50
40
30
20
10
0
10
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
IF=3A
VR=160V
1000
IRM(A)
10
IF=3A
VR=160V
8
6
Tj=125°C
4
Tj=25°C
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 9.
Dynamic parameters versus junction temperature
QRR; IRM [Tj] / QRR; IRM [Tj=125°C]
1.4
IF=3A
1.2
VR=160V
1.0
0.8
IRM
0.6
QRR
0.4
0.2
Tj(°C)
0.0
25
50
75
100
125
150
4/7
Doc ID 023250 Rev 1
Share Link: 