STW11NK100Z Ver la hoja de datos (PDF) - STMicroelectronics

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STW11NK100Z

N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET

STMicroelectronics 

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STW11NK100Z

Table 4. Gate-source zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30

0

V

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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