TGS2351
DC – 6 GHz High Power SPDT Switch
Specifications
Absolute Maximum Ratings
Parameter
Control Voltage, Vc
Control Current, Ic
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
RF Input Power, Hot Switching,
50% switching Duty Cycle
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
Rating
- 50 V
-1 to 7.8 mA
10 W
47 dBm
40 dBm
275 oC
320 oC
-55 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Vc1
Vc2
Ic1 / Ic2
Min Typical Max Units
-40 / 0
V
0 / -40
V
-0.4 to 0.1
mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V, see Function Table at Application Circuit on page
6.
Parameter
Min
Typical
Max Units
Operational Frequency Range
DC
6
GHz
Control Current (Ic1/ Ic2)
-1
0.1
mA
Insertion Loss (On-State): DC to 6 GHz
0.5
1
dB
Input Return Loss – On-State (Common Port RL)
12
20
dB
Output Return Loss – On-State (Switched Port RL)
12
20
dB
Isolation (Off-State)
-40
-31
dB
Output Return Loss – Off-Sate (Isolated Port RL)
Input Power 1/
2.5
dB
46
dBm
Output Power @ Pin = 46dBm, 1-6GHz
44.5
45
46
dBm
Insertion Loss Temperature Coefficient
-0.003
dB/°C
Output TOI @ Pin = 23 dBm
Switching Speed – On 2/
Switching Speed – Off 2/
50
dBm
15
ns
15
ns
1/ The Input Power will be reduced if < 10 MHz.
2/ These Switching Speed dependent on Switch Driver circuit to deliver Vc = 0/-40 V. The rise and fall time of the Switch Driver which
was used to perform for this data is 35 ns, as shown on page 5. For further technical information, see GaN SPDT Switch Drivers
Application Note
Data Sheet: Rev B 06/20/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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