J11A10M3 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

J11A10M3

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Toshiba 

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = -25 V, Tch = 25 (initial), L = 500 µH, RG = 25 Ω, IAR = -11 A

TJ11A10M3

Symbol

Rth(ch-c)

Rth(ch-a)

Max

Unit

5.2

/W

62.5

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2012-08-31

Rev.1.0

Share Link: