TN1215-G Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

TN1215-G

SCR

STMicroelectronics 

TN1215-G

THERMAL RESISTANCES

Symbol

Rth(j-a)

Rth(j-c)

Parameter

Junction to ambient (S=1cm2)

Junction to case for D.C

GATE CHARACTERISTICS

PG (AV)= 1W PGM = 10 W (tp = 20 µs)

IGM = 4 A (tp = 20 µs) VRGM = 5 V

Value

45

1.3

Unit

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

Symbol

IGT

Test Conditions

VD = 12V (DC) RL= 33Ω

VGT

VGD

IH

IL

VTM

IDRM

IRRM

dV/dt

VD = 12V (DC) RL= 33Ω

VD = VDRM RL = 3.3kΩ

IT= 100mA Gate open

IG = 1.2 IGT

ITM= 24A tp= 380µs

VD = VDRM

VR = VRRM

VD=67%VDRM Gate open

Type Value Unit

Tj= 25°C MIN

2

mA

MAX

15

Tj= 25°C MAX

1.3

V

Tj= 125°C MIN

0.2

V

Tj= 25°C MAX

30

mA

Tj= 25°C MAX

60

mA

Tj= 25°C MAX

1.5

V

Tj= 25°C MAX

5

µA

Tj= 125°C MAX

3

mA

Tj= 125°C MIN

200 V/µs

ORDERING INFORMATION Add ”-TR” suffix for Tape & Reel shipment

TN 12 15 - 600 G

SCR

CURRENT

SENSITIVITY

PACKAGES :

G: D2PAK

VOLTAGE

2/5

®

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