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Número de pieza
componentes Descripción
TTC009 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TTC009
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TTC009 Datasheet PDF : 5 Pages
1
2
3
4
5
3
500 300
I
C
– V
CE
200
2
100
50
20
10
1
I
B
=
5 mA
Common emitter
Tc
=
25°C
Single pulse test
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
TTC009
1000
100
h
FE
– I
C
Tc
=
100°C
−
55°C
25°C
10
Common emitter
V
CE
=
2 V
Single pulse test
1
0.001
0.01
0.1
1
10
Collector current I
C
(A)
V
CE (sat)
– I
C
10
Common emitter
I
C
/I
B
=
10
Single pulse test
1
0.1
0.01
0.001
Tc
=
100°C
−
55°C
25°C
0.01
0.1
1
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
I
C
/I
B
=
10
Single pulse test
1
−
55°C
25°C
Tc
=
100°C
0.1
0.001
0.01
0.1
1
10
Collector current I
C
(A)
3
Common emitter
V
CE
=
2 V
Single pulse test
I
C
– V
BE
2
Tc
=
100
℃
25°C
1
−
55°C
0
0
0.5
1
1.5
2
Base-emitter voltage V
BE
(V)
3
2010-07-07
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