EMB10(2008) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

EMB10
(Rev.:2008)

General purpose (dual digital transistors)

ROHM Semiconductor 

Transistors

EMB10 / UMB10N / IMB10A

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Input voltage

VI (off)

−

− −0.5

VCC=−5V, IO=−100µA

V

VI (on) −1.1

−

−

VO=−0.3V, IO=−5mA

Output voltage

VO (on)

−

−0.1 −0.3

V IO/II=−5mA/−0.25mA

Input current

II

−

− −3.6 mA VI=−5V

Output current

IO (off)

−

− −0.5 µA VCC=−50V, VI=0V

DC current gain

GI

80

−

−

− VO=−5V, IO=−10mA

Transition frequency

fT

−

250

−

MHz VCE=−10V, IE=5mA, f=100MHz

∗

Input resistance

R1

1.54 2.2 2.86 kΩ

−

Resistance ratio

R2 / R1 17

21

26

−

−

∗ Transition frequency of the device

zPackaging specifications

Package

Type

Code

Basic ordering

unit (pieces)

EMB10

UMB10N

IMB10A

T2R

8000

Taping

TN

3000

T110

3000

zElectrical characteristic curves

−100

VO=−0.3V

−50

−20

−10

−5

−2

−1

−500m

Ta=−40˚C

25˚C

100˚C

−200m

−100m

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (A)

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

−200m

−100m

−50m

Ta=100˚C

25˚C

−40˚C

lO/lI =20

−20m

−10m

−5m

−-2m

−1m

−100µ −200µ −500µ −1m −2m

−5m −10m −20m −50m−100m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output

current

−10m

−5m

−2m

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

−5µ

−2µ

−1µ

0

VCC=−5V

Ta=100˚C

25˚C

−40˚C

−0.5

−1

−1.5

−2

−2.5

−3

INPUT VOLTAGE : VI (off) (V)

Fig.2 Output current vs. input voltage

(OFF characteristics)

1k

500

Ta=100˚C

200

25˚C

−40˚C

100

50

20

10

5

VO=−5V

2

1

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m

OUTPUT CURRENT : IO (A)

Fig.3 DC current gain vs. output

current

Rev.C

2/2

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