UT2312G(2009) Ver la hoja de datos (PDF) - Unisonic Technologies
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UT2312G Datasheet PDF : 3 Pages
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UNISONIC TECHNOLOGIES CO., LTD
UT2312
20V N-CHANNEL
ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) = 33 mΩ @VGS = 4.5 V
* RDS(ON) = 40 mΩ @VGS = 2.5 V
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2312L-AE3-R
UT2312G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
23N
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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