ZXMN2A02N8TC Ver la hoja de datos (PDF) - Diodes Incorporated.

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Fabricante

ZXMN2A02N8TC

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMN2A02N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

STATIC

PARAMETER

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (1)(3)

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

SYMBOL MIN. TYP. MAX. UNIT

CONDITIONS.

V(BR)DSS 20

V ID=250μA, VGS=0V

IDSS

1

␮A VDS=20V, VGS=0V

IGSS

100 nA VGS=Ϯ12V, VDS=0V

VGS(th)

0.7

RDS(on)

0.02

V ID=250␮A, VDS= VGS

⍀ VGS=4.5V, ID=11A

0.04 ⍀ VGS=2.5V, ID=8.4A

gfs

27

S VDS=10V,ID=11A

Ciss

Coss

Crss

1900

356

218

pF

VDS=10V, VGS=0V,

pF f=1MHz

pF

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

7.9

10

33.3

13.6

18.9

5.2

4.9

ns

ns VDD =10V, ID=1A

ns RG≅6.0Ω, VGS=4.5V

ns

nC VDS=10V,VGS=4.5V,

nC ID=11A

nC

VSD

trr

Qrr

0.85

16.3

7.8

0.95

V TJ=25°C, IS=11.5A,

VGS=0V

ns TJ=25°C, IF=2.1A,

nC di/dt= 100A/μs

NOTES

(1) Measured under pulsed conditions. Width Յ300μs. Duty cycle Յ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 6 - FEBRUARY 2007

SEMICONDUCTORS

4

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