ZXMN10A08DN8TC Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

ZXMN10A08DN8TC

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMN10A08DN8

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL

STATIC

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage

Gate-source threshold voltage

Static drain-source on-state resistance (1)

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

Forward transconductance (1)(3)

DYNAMIC (3)

Input capacitance

Output capacitance

Reverse transfer capacitance

SWITCHING(2) (3)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

SOURCE-DRAIN DIODE

Diode forward voltage (1)

VSD

Reverse recovery time (3)

trr

Reverse recovery charge (3)

Qrr

MIN. TYP. MAX. UNIT CONDITIONS.

100

V ID=250␮A, VGS=0V

0.5 ␮A VDS=100V, VGS=0V

100 nA VGS=Ϯ20V, VDS=0V

2.0

V

I

=25

D

0

␮

A,

VDS=

VGS

0.25

0.30

⍀ VGS=10V, ID=3.2A

⍀ VGS=6V, ID=2.6A

5.0

S VDS=15V,ID=3.2A

405

28.2

14.2

pF

pF

VDS=50 V, VGS=0V,

f=1MHz

pF

3.4

ns

2.2

ns VDD =30V, ID=1.2A

8

ns RG≅6.0⍀, VGS=10V

3.2

ns

4.2

nC VDS=50V,VGS=5V,

ID=1.2A

7.7

nC

1.8

nC

VDS=50V,VGS=10V,

ID=1.2A

2.1

nC

0.87 0.95

27

32

V TJ=25°C, IS=3.2A,

VGS=0V

ns TJ=25°C, IF=1.2A,

nC di/dt= 100A/␮s

NOTES:

(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 4 - JANUARY 2005

SEMICONDUCTORS

4

Share Link: