FGPF15N60UNDF Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGPF15N60UNDF Datasheet PDF : 9 Pages
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400 V, IC = 15 A,
VGE = 15 V
-
43
-
nC
-
6
-
nC
-
26
-
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 15 A
TC = 25oC
TC= 125oC
trr
Qrr
Diode Reverse Recovery Time
IF =15 A, dIF/dt = 200 A/μs
Diode Reverse Recovery Charge
TC = 25oC
TC= 125oC
TC = 25oC
TC= 125oC
Min.
-
-
-
-
-
-
Typ.
1.6
1.5
82.4
142
213
541
Max
2.2
-
Unit
V
ns
-
-
nC
-
©2012 Fairchild Semiconductor Corporation
3
FGPF15N60UNDF Rev. C2
www.fairchildsemi.com
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