FGPF15N60UNDF Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGPF15N60UNDF Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
4
IC = 7.5A
15A
30A
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
200V
12
400V
VCC = 100V
9
6
3
Common Emitter
TC = 25oC
0
0 5 10 15 20 25 30 35 40 45 50
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
50
40
30
20
10
5
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
10 20 30 40 50 60
Gate Resistance, RG [Ω]
Figure 8. Capacitance Characteristics
3000
1000
Cies
Coes
Cres
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
100
10μs
10
100μs
1ms
1
10 ms
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10
DC
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0
10 20 30 40 50 60
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation
5
FGPF15N60UNDF Rev. C2
www.fairchildsemi.com
Share Link: 