BB640 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BB640

Silicon Variable Capacitance Diode

Infineon Technologies 

BB640...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 30 V

VR = 30 V, TA = 85 °C

IR

nA

-

-

10

-

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 25 V, f = 1 MHz

VR = 28 V, f = 1 MHz

CT

pF

62 69 76

47.5 54.5 61.5

2.85 3.28 3.7

2.8 3.05 3.3

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

Capacitance ratio

VR = 2 V, VR = 25 V, f = 1 MHz

Capacitance matching1)

VR = 1 V, VR = 28 V, f = 1 MHz

Series resistance

CT = 12 pF, f = 100 MHz

CT1/CT28 19.5

-

25

CT2/CT25

15 16.6

-

∆CT/CT

-

-

2.5 %

rS

- 1.15 - Ω

1For details please refer to Application Note 047.

2

2011-06-15

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