MC74HC390A
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ MAXIMUM RATINGS*
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Symbol
Parameter
Value
Unit
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ VCC
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Vin
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
V
– 0.5 to VCC + 0.5 V
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Vout
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Iin
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Iout
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ ICC
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ PD
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air,
Plastic DIPâ€
750
mW
SOIC Packageâ€
500
TSSOP Packageâ€
450
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Tstg Storage Temperature
– 65 to + 150
_C
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Plastic DIP, SOIC or TSSOP Package
260
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ *Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Symbol
Parameter
Min Max Unit
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ VCC DC Supply Voltage (Referenced to GND)
2.0 6.0 V
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ TA
Operating Temperature, All Package Types
– 55 + 125 _C
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ tr, tf Input Rise and Fall Time
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ (Figure 1)
VCC = 2.0 V 0
VCC = 3.0 V 0
VCC = 4.5 V 0
VCC = 6.0 V 0
1000 ns
600
500
400
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Guaranteed Limit
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v v 85_C
125_C Unit
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ VIH
Minimum High–Level Input
Voltage
v Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
2.0
1.5
1.5
1.5
V
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ VIL
Maximum Low–Level Input
Voltage
v Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 µA
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ VOH
Minimum High–Level Output
Voltage
v Vin = VIH or VIL
|Iout| 20 µA
2.0
1.9
1.9
1.9
V
4.5
4.4
4.4
4.4
6.0
5.9
5.9
5.9
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ v Vin=VIHorVIL |Iout|
v |Iout|
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ v |Iout|
2.4 mA
4.0 mA
5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ VOL
Maximum Low–Level Output
Voltage
v Vin = VIH or VIL
|Iout| 20 µA
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ v Vin=VIHorVIL |Iout|
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ v |Iout|
ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ v |Iout|
2.4 mA
4.0 mA
5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
http://onsemi.com
2