2SK3018 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SK3018 Datasheet PDF : 4 Pages
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Transistor
2.5V Drive Nch MOS FET
2SK3018
2SK3018
zStructure
Silicon N-channel
MOSFET
zApplications
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zExternal dimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : KN
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SK3018
Taping
T106
3000
zEquivalent circuit
Drain
Gate
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
±100
mA
Drain current
Pulsed
IDP∗1
±400
mA
Total power dissipation
PD∗2
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
∗ Gate
Protection
Diode
Source
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
zThermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
Symbol
Rth(ch-a) ∗
Limits
625
Unit
°C / W
Rev.B
1/3
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