BA10324AF-TR(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BA10324AF-TR
(Rev.:2009)

ROHM’s Selection Operational Amplifier / Comparator Series Operational Amplifiers: Ground Sense

ROHM Semiconductor 

BA10358F/FV,BA10324AF/FV,BA2904SF/FV/FVM,BA2904F/FV/FVM,BA2904HFVM-C,

BA2902SF/FV/KN,BA2902F/FV/KN,BA3404F/FVM

Technical Note

●Precautions

1) Unused circuits

When there are unused circuits, it is recommended that they be connected as

VCC

in Fig.126, setting the non-inverting input terminal to a potential within the in-phase

input voltage range (Vicm).

2) Input voltage

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po範te囲nc内ialのin電V位icm

Applying VEE+32[V](BA2904S/BA2904/BA2902S/BA2902 family, BA2904HFVM-C)

and VEE+36[V](BA3404 family) to the input terminal is possible without causing

deterioration of the electrical characteristics or destruction, irrespective of the

VEE

supply voltage.However, this does not ensure normal circuit operation.

Please note that the circuit operates normally only when the input voltage is

within the common mode input voltage range of the electric characteristics.

Fig. 126 Example of processing unused

3) Power supply (single / dual)

The op-amp operates when the voltage supplied is between VCC and VEETherefore, the single supply op-mp can be used

as a dual supply op-amp as well.

4) Power dissipation (Pd)

Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to the rise

in chip temperature, including reduced current capability. Therefore, please take into consideration the power dissipation

(Pd) under actual operating conditions and apply a sufficient margin in thermal design. Refer to the thermal derating

curves for more information.

5) Short-circuit between pins and erroneous mounting

Incorrect mounting may damage the IC. In addition, the presence of foreign substances between the outputs, the output

and the power supply, or the output and GND may result in IC destruction.

6) Operation in a strong electromagnetic field

Operation in a strong electromagnetic field may cause malfunctions.

7) Radiation

This IC is not designed to withstand radiation.

8) IC handing

Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuation of the electrical

characteristics due to piezoelectric (piezo) effects.

9) IC operation

The output stage of the IC is configured using Class C push-pull circuits. Therefore, when the load resistor is connected to

the middle potential of VCC and VEE, crossover distortion occurs at the changeover between discharging and charging of

the output current. Connecting a resistor between the output terminal and GND, and increasing the bias current for Class

A operation will suppress crossover distortion.

10) Board inspection

Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every

process is recommended. In addition, when attaching and detaching the jig during the inspection phase, ensure that the

power is turned OFF before inspection and removal. Furthermore, please take measures against ESD in the assembly

process as well as during transportation and storage.

11) Output capacitor

Discharge of the external output capacitor to VCC is possible via internal parasitic elements when VCC is shorted to VEE,

causing damage to the internal circuitry due to thermal stress. Therefore, when using this IC in circuits where oscillation

due to output capacitive load does not occur, such as in voltage comparators, use an output capacitor with a capacitance

less than 0.1μF.

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© 2009 ROHM Co., Ltd. All rights reserved.

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2009.05 - Rev.A

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