2DB1188Q-13R Ver la hoja de datos (PDF) - Diodes Incorporated.
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2DB1188Q-13R Datasheet PDF : 7 Pages
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2DB1188P/Q/R
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
2DB1188P
DC Current Gain
2DB1188Q
2DB1188R
SMALL SIGNAL CHARACTERISTICS
Symbol Min
BVCBO
-40
BVCEO
-32
BVEBO
-6
ICBO
IEBO
VCE(sat)
82
hFE
120
180
Typ
-0.35
Current Gain-Bandwidth Product
fT
120
Output Capacitance
Cobo
20
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
-100
-100
-0.8
180
270
390
Unit
Test Condition
V IC = -100µA, IE = 0
V IC = -10mA, IB = 0
V IE = -100µA, IC = 0
nA VCB = -20V, IE = 0
nA VEB = - 5V, IC = 0
V IC = -2A, IB = -0.2A
VCE = -3V, IC = -0.5A
MHz
pF
VCE = -5V, IC = -0.1A,
f = 30MHz
VCB = -10V, f = 1MHz
1.4
350
1.2
IB = -10mA
300
VCE = -3V
TA = 150°C
1.0
IB = -8mA
250
TA = 85°C
0.8
IB = -6mA
200
0.6
150 TA = 25°C
IB = -4mA
0.4
100
IB = -2mA
TA = -55°C
0.2
50
0
0
1
2
3
4
5
-VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 1. Typical Collector Current
vs. Collector-Emitter Voltage
0.6
0.5
IC/IB = 10
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 2. Typical DC Current Gain
vs. Collector Current (2DB1188Q)
1.2
VCE = -3V
1.0
0.4
0.8
TA = -55°C
0.3
0.6
TA = 150°C
TA = 25°C
0.2
0.4 TA = 85°C
0.1
TA = 85°C
TA = 25°C
TA = -55°C
0.2 TA = 150°C
0
0.0001 0.001 0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.0001 0.001 0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 4. Typical Base-Emitter Turn-On Voltage
vs. Collector Current
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
4 of 7
www.diodes.com
February 2013
© Diodes Incorporated
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