BC556A Ver la hoja de datos (PDF) - NXP Semiconductors.
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BC556A Datasheet PDF : 9 Pages
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC556; BC557
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter-base cut-off current
DC current gain
BC556
BC557
BC556A
BC556B; BC557B
BC557C
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
VCB = −30 V; IE = 0 A
VCB = −30 V; IE = 0 A; Tj = 150 °C
VEB = −5 V; IC = 0 V
IC = −2 mA; VCE = −5 V;
see Figs 2, 3 and 4
−
−1 −15 nA
−
−
−4 μA
−
−
−100 nA
125 −
475
125 −
800
125 −
250
220 −
475
420 −
800
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
IC = −10 mA; IB = −0.5 mA; note 1
IC = −100 mA; IB = −5 mA; note 1
VCE = −5 V; IC = −2 mA; note 2
VCE = −5 V; IC = −10 mA; note 2
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz
VCE = −5 V; IC = −10 mA; f = 100 MHz
VCE = −5 V; IC = −200 μA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
−
−
−600
−
−
−
100
−
−60
−180
−750
−930
−650
−
3
10
−
2
−300
−650
−
−
−750
−820
−
−
−
10
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
2004 Oct 11
3
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