DG408BP45 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG408BP45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

2500

2000

Conditions:

Tj = 25°C,

CS = 1.0µF,

dIGQ/dt = 30A/µs

1500

VDRM

0.75x VDRM

0.5x VDRM

1000

500

0

0

250

500

750

1000

1250

On-state current IT - (A)

Fig.15 Turn-off energy vs on-state current

2500

2250

Conditions:

Tj = 25°C,

CS = 1.0µF,

IT = 1000A

VDRM

0.75x VDRM

2000

0.5x VDRM

1500

1750

10/19

1500

10

20

30

40

50

60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.16 Turn-off energy vs rate of rise of reverse gate current

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